r09ds0058ej0100 rev.1.00 page 1 of 8 mar 19, 2013 data sheet ne3521m04 n-channel gaas hj-fet, k band low noise and high-gain features ? low noise figure and high associated gain: nf = 0.85 db typ., ga = 11 db typ. @ v ds = 2 v, i d = 10 ma, f = 20 ghz nf = 0.9 db typ., ga = 10.5 db typ. @v ds = 2 v, i d = 6ma, f = 20 ghz (reference value) ? flat-lead 4-pin thin-type super minimold (m04) package applications ? dbs lnb gain-stage, mix-stage ? low noise amplifier for microw ave communication system ordering information part number order number package quantity marking supplying form ne3521m04-t2 ne3521m04-t2-a 3 kpcs/reel ne3521m04-t2b NE3521M04-T2B-A flat-lead 4-pin thin-type super minimold (m04) (pb-free) 15 kpcs/reel v86 ? embossed tape 8 mm wide ? pin 1 (source), pin 2 (drain) face the perforation side of the tape remark to order evaluation samples, contact your nearby sales office. part number for sample order: ne3521m04 absolute maximum ratings (t a = +25 c, unless otherwise specified) parameter symbol ratings unit drain to source voltage v ds 4.0 v gate to source voltage v gs ?3.0 v drain current i d i dss ma gate current i g 80 a total power dissipation note p tot 125 mw channel temperature t ch +125 c storage temperature t stg ?65 to +125 c note: mounted on 1.08 cm 2 1.0 mm (t) glass epoxy pwb caution observe precautions when handling because these devi ces are sensitive to electrostatic discharge. r09ds0058ej0100 rev.1.00 mar 19, 2013
ne3521m04 r09ds0058ej0100 rev.1.00 page 2 of 8 mar 19, 2013 recommended operating range (t a = +25 c, unless otherwi se specified) parameter symbol min. typ. max. unit drain to source voltage v ds 1 2 3 v drain current i d 3 10 15 ma input power p in ? ? 0 dbm electrical characteristics (t a = +25 c, unless otherwise specified) parameter symbol test condi tions min. typ. max. unit gate to source leak current i gso v gs = ?3.0 v ? 0.5 10 a saturated drain current i dss v ds = 2 v, v gs = 0 v 25 45 70 ma gate to source cut-off voltage v gs (off) v ds = 2 v, i d = 100 a ?0.2 ?0.7 ?1.3 v transconductance gm v ds = 2 v, i d = 10 ma 50 ? ? ms noise figure nf ? 0.85 1.2 db associated gain ga v ds = 2 v, i d = 10 ma, f = 20 ghz 9 11 ? db standard characterist ics for reference (t a = +25 c, unless otherwise specified) parameter symbol test conditions reference value unit noise figure nf 0.9 db associated gain ga v ds = 2 v, i d = 6 ma, f = 20 ghz 10.5 db
ne3521m04 r09ds0058ej0100 rev.1.00 page 3 of 8 mar 19, 2013 typical characteristics (t a = +25 c, unless otherwise specified) ambient temperature t a ( c) total power dissipation p tot (mw) total power dissipation vs. ambient temperature gate to source voltage v gs (v) drain current i d (ma) drain current vs. gate to source voltage drain to source voltage v ds (v) 50 100 125 150 250 200 -0.80 -0.60 -0.40 -0.20 0.00 0 50 10 20 30 40 50 60 70 80 100 150 125 200 250 0 frequency f (ghz) minimum noise figure, associated gain vs.frequency drain current i d (ma) minimum noise figure nfmin (db) minimum noise figure nfmin (db) associated gain ga (db) associated gain ga (db) v ds = 2 v drain current i d (ma) drain current vs. drain to source voltage 0.0 1.0 2.0 3.0 4.0 10 20 30 40 50 60 70 80 0 vgs = 0 v -0.1 v -0.2 v -0.3 v -0.4 v -0.5 v 10 5152030 25 0.0 0.2 0.4 0.6 1.2 1.4 1.6 2.0 1.8 0.8 1.0 0 2 4 6 12 14 16 20 18 8 10 v ds = 2 v i d = 10 ma ga nfmin minimum noise figure, associated gain vs.drain current 0 0.0 1.0 0.5 1.5 2.0 2.5 4 8 7 6 5 10 9 12 11 14 13 5 101520 30 25 f = 20 ghz v ds = 2 v ga nfmin remark the graphs indicate nominal characteristics.
ne3521m04 r09ds0058ej0100 rev.1.00 page 4 of 8 mar 19, 2013 s-parameters s-parameters and noise parameters are provided on our web site in a form (s2p) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. click here to download s-parameters. [products] [rf devices] [device parameters] url http://www.renesas.com/products/microwave/
ne3521m04 r09ds0058ej0100 rev.1.00 page 5 of 8 mar 19, 2013 package dimensions flat-lead 4-pin thin-t ype super minimold (m 04) (unit: mm) pin connections 1. source 2. drain 3. source 4. gate 0.590.05 0.11 +0.1 ?0.05 (bottom view) 43 12 1.25 2.00.1 1.30 (1.05) 0.60 0.65 0.65 0.65 1.30 1.25 2.00.1 12 43 1.250.1 2.050.1 0.30 +0.1 ?0.05 0.40 +0.1 ?0.05 0.30 +0.1 ?0.05 0.30 +0.1 ?0.05 v86
ne3521m04 r09ds0058ej0100 rev.1.00 page 6 of 8 mar 19, 2013 mounting pad dimensions flat-lead 4-pin thin-t ype super minimold (m 04) (unit: mm) -reference 1- 4 3 2 1 1.20 1.20 device direction 1 2 3 4 1.35 0.60 0.75 0 . 4 2 0 . 4 2 0 . 3 8 0 . 2 8 1.35 0.60 0.75 0.56 4 - 0.50 1.42 0.80 0.58 1.26 4 3 2 1 1.20 1.20 device direction 1 2 3 4 1.35 0.60 0.75 0 . 4 2 0 . 4 2 0 . 3 8 0 . 2 8 1.35 0.60 0.75 0.56 4 - 0.50 1.42 0.80 0.58 1.26 -reference 2- 2 1 3 4 0.6 1.6 1.25 1.3 0.6 0.5 remark the mounting pad layout in this document is for reference only. 1 2 3 4 device direction 1 2 3 4 device direction
ne3521m04 r09ds0058ej0100 rev.1.00 page 7 of 8 mar 19, 2013 recommended soldering conditions this product should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than those recommended below, contact your nearby sales office. soldering method soldering conditions condition symbol infrared reflow peak temperature (package surface temperature) : 260 c or below time at peak temperature : 10 seconds or less time at temperature of 220 c or higher : 60 seconds or less preheating time at 120 to 180 c : 120 30 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below ir260 partial heating peak temperature (package surface temperature) : 350 c or below soldering time (per side of device) : 3 seconds or less maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below hs350 caution do not use different soldering methods together (except for partial heating).
ne3521m04 r09ds0058ej0100 rev.1.00 page 8 of 8 mar 19, 2013 caution gaas products this product uses gallium arsenide (gaas). gaas vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. ? follow related laws and ordinances when disposi ng of the product. if there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subjec t to special control) up until final disposal. ? do not burn, destroy, cut, crush, or chemically dissolve the product. ? do not lick the product or in any way allow it to enter the mouth.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history ne3521m04 data sheet description rev. date page summary 1.00 mar 19, 2013 - first edition issued
notice 1. descriptions of circuits, software and other related information in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 3. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of renesas electronics or others. 4. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part . renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of renesas electronics product. 5. renesas electronics products are classified according to the following two quality grades: "standard" and "high quality". t he recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. "standard": computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "high quality": transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. renesas electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). you must check the quality grade of each renesas electronics product before using it in a particular application. you may not use any renesas electronics product for any application for which it is not intended. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for which the product is not intended by renesas electronics. 6. you should use the renesas electronics products described in this document within the range specified by renesas electronics , especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas electronics shall have no liability for malfunctions or damages arising out of the use of renesas electronics products beyond such specified ranges. 7. although renesas electronics endeavors to improve the quality and reliability of its products, semiconductor products have s pecific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. further, renesas electronics products are not subject to radiation resistance design. please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. please contact a renesas electronics sales office for details as to environmental matters such as the environmental compatib ility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the eu rohs directive. renesas electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. renesas electronics products and technology may not be used for or incorporated into any products or systems whose manufactu re, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. you should not use renesas electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. when exporting the renesas electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. it is the responsibility of the buyer or distributor of renesas electronics products, who distributes, disposes of, or othe rwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, renesas electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of renesas electronics products. 11. this document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of renesa s electronics. 12. please contact a renesas electronics sales office if you have any questions regarding the information contained in this doc ument or renesas electronics products, or if you have any other inquiries. (note 1) "renesas electronics" as used in this document means renesas electronics corporation and also includes its majority-o wned subsidiaries. (note 2) "renesas electronics product(s)" means any product developed or manufactured by or for renesas electronics. htt p ://www.renesas.co m refer to "htt p ://www.renesas.com/" for the latest and detailed information . california eastern laboratories , inc. 4590 patrick henr y drive, santa clara, california 95054, u.s.a . tel: +1-408-919-2500, fax: +1-408-988-0279 renesas electronics europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k tel: +44-1628-651-700, fax: +44-1628-651-804 renesas electronics europe gmbh arcadiastrasse 10, 40472 dsseldorf, germany tel: +49-211-65030, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. 7th floor, quantum plaza, no.27 zhichunlu haidian district, beijing 100083, p.r.china tel: +86-10-8235-1155, fax: +86-10-8235-7679 renesas electronics (shanghai) co., ltd. unit 204, 205, azia center, no.1233 lujiazui ring rd., pudong district, shanghai 200120, china tel: +86-21-5877-1818, fax: +86-21-6887-7858 / -7898 renesas electronics hong kong limited unit 1601-1613, 16/f., tower 2, grand century place, 193 prince edward road west, mongkok, kowloon, hong kong tel: +852-2886-9318, fax: +852 2886-9022/9044 renesas electronics taiwan co., ltd. 13f, no. 363, fu shing north road, taipei, taiwan tel: +886-2-8175-9600, fax: +886 2-8175-9670 renesas electronics singapore pte. ltd. 80 bendemeer road, unit #06-02 hyflux innovation centre singapore 339949 tel: +65-6213-0200, fax: +65-6213-0300 renesas electronics malaysia sdn.bhd. unit 906, block b, menara amcorp, amcorp trade centre, no. 18, jln persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: +60-3-7955-9390, fax: +60-3-7955-9510 renesas electronics korea co. , ltd . 11f., samik lavied' or bld g ., 720-2 yeoksam-don g , kan g nam-ku, seoul 135-080, korea tel: +82-2-558-3737 , fax: +82-2-558-514 1 s ale s o ffi c e s ? 2013 renesas electronics corporation. all rig hts reserved. [colophon 2.2 ]
|
